Preliminary Technical Information
Polar3 TM HiperFET TM
Power MOSFETs
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
V DSS
I D25
R DS(on)
= 600V
= 50A
≤ 145m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-268 (IXFT)
G
TO-3P (IXFQ)
S
D (Tab)
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 150 ° C
600
V
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
600
± 30
± 40
V
V
V
G
D
S
D (Tab)
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
50
125
25
1
A
A
A
J
TO-247 (IXFH)
dv/dt
P D
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
T C = 25 ° C
35
1040
V/ns
W
G
D
S
D (Tab)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247 & TO-3P)
TO-268
TO-3P
TO-247
300
260
1.13 / 10
4.0
5.5
6.0
° C
° C
Nm/lb.in.
g
g
g
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low R DS(ON) and Q G
Low Package Inductance
Advantages
High Power Density
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Easy to Mount
Space Savings
BV DSS
V GS = 0V, I D = 1mA
600
V
V GS(th)
I GSS
V DS = V GS , I D = 4mA
V GS = ± 30V, V DS = 0V
3.0
5.0
± 100
V
nA
Applications
Switch-Mode and Resonant-Mode
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
25 μ A
2 mA
145 m Ω
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
? 2012 IXYS CORPORATION, All Rights Reserved
DS100310A(01/12)
相关PDF资料
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相关代理商/技术参数
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IXFT52N30Q 功能描述:MOSFET 300V 52A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXFT58N20Q 功能描述:MOSFET 200V 58A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFT60N20 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
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